Method and system for high-speed precise laser trimming and scan lens for use therein

ABSTRACT

A method, system and scan lens for use therein are provided for high-speed, laser-based, precise laser trimming at least one electrical element along a trim path. The method includes generating a pulsed laser output with a laser, the output having one or more laser pulses at a repetition rate. A fast rise/fall time, pulse-shaped q-switched laser or an ultra-fast laser may be used. Beam shaping optics may be used to generate a flat-top beam profile. Each laser pulse has a pulse energy, a laser wavelength within a range of laser wavelengths, and a pulse duration. The wavelength is short enough to produce desired short-wavelength benefits of small spot size, tight tolerance, high absorption and reduced or eliminated heat-affected zone (HAZ) along the trim path, but not so short so as to cause microcracking. In this way, resistance drift after the trimming process is reduced.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of U.S. Provisional Application Ser.No. 60/763,242, filed Jan. 30, 2006, entitled “Method and System forHigh-Speed Precise Laser Trimming, Scan Lens System for Use Therein andElectrical Device Produced Thereby.” This application claims priority toand is a continuation-in-part of U.S. patent application Ser. No.11/376,527, filed Mar. 15, 2006, entitled “Method and System forHigh-Speed Precise Laser Trimming and Electrical Device ProducedThereby.” That application claims priority to and is acontinuation-in-part application of U.S. patent application Ser. No.11/245,282, filed Oct. 6, 2005. That application claims the benefit ofU.S. provisional application Ser. No. 60/617,130, filed Oct. 8, 2004,entitled “Laser System And Method For Laser Trimming.” This applicationalso claims priority to and is a continuation-in-part application ofU.S. patent application Ser. No. 11/131,668, entitled “Method And SystemFor High-Speed Precise Micromachining An Array Of Devices,” filed May18, 2005, which is a divisional of Ser. No. 10/397,541, entitled “MethodAnd System For High-Speed Precise Micromachining An Array Of Devices,”filed Mar. 26, 2003, which is a continuation-in-part application of U.S.patent application Ser. No. 10/108,101, entitled “Methods And SystemsFor Processing A Device, Methods And Systems For Modeling Same And TheDevice,” filed 27 Mar. 2002, now published U.S. patent application No.2002/0162973. U.S. Pat. No. 6,341,029, entitled “Method and Apparatusfor Shaping a Laser-Beam Intensity Profile by Dithering,” assigned tothe assignee of the present invention with a common inventor, is herebyincorporated by reference in its entirety. This application is alsorelated to U.S. Pat. No. 6,339,604, entitled “Pulse Control In LaserSystems,” also assigned to the assignee of the present invention. Thisapplication is also related to U.S. Pat. No. 6,777,645, entitled“High-Speed, Laser-Based Method and System for Processing Material ofOne or More Targets Within a Field” also assigned to the assignee of thepresent invention.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention generally relates to laser material processing and, moreparticularly, relates to methods and systems for high-speed, precisetrimming utilizing a laser and scan lens for use therein.

2. Background Art

Laser trimming has been a part of manufacturing process in semiconductorand microelectronics industries for more than 30 years. One of thechallenges is always to reduce the resistance drift after the trimmingprocess. Post-trim stability is extremely important since the purpose oftrimming in the first place is to increase device accuracy. If thedevice later drifts out of specifications, nothing has been gained. Ithas been known that trim induced instability or long-term drift arisesfrom the heat-affected zone (HAZ) along the laser cut edges and anyresidual material in the cut itself. The laser trim itself causesheating and melting of film material near the trim. This heating causesa change in the sheet resistance, the temperature coefficient of theresistance (TCR), and the aging characteristics in the zone adjacent tothe trim. Resistor material that has been heated to a very hightemperature, but not vaporized, will have its electrical characteristicsaltered somewhat. The electrical resistance of these regions tends toincrease over time before becoming stabilized.

The magnitude of the change is primarily dependent on the resistormaterial as well as the laser processing parameters. With the currentlaser technology, this potential instability due to the heat-affectedzone along the laser cut edges remains. This is inherent in the trimprocess and it cannot be eliminated. The use of link cut geometry may beone solution since once the link is severed, little or no current flowsin the unstable region. But links with reasonable resolution require adisproportionate share of the device real estate and are only used forsimple trims such as op-amp offset voltage or in conjunction with acontinuous trim in a course/fine arrangement. Simply designing largerresistors is another way to reduce the instability since this allows thecurrent to spread over a larger area and the unstable portion becomes asmaller percentage of the total. However, this will squander preciousreal estate since cutting drift in half requires doubling the resistorsize. Similarly, making the laser spot smaller reduces the size of theunstable region relative to the overall current carrying area resultingin an improvement in overall stability. This is limited, however, by thechoice of the laser wavelength, of optics, and by various practicalitiessuch as reduced depth of focus, less working distance, and materialre-deposition in the case of thick films.

Traditionally, a Nd:YAG laser with wavelength at 1 micron is used fortrimming of chip resistors. As the sizes of resistors get smaller, thesubstrates thinner, and tolerances tighter, this wavelength hits itsfundamental limitations in terms of trimming kerf width, heat-affectedzone (i.e., HAZ) and, therefore the drift of TCR and Resistance, R.

It is well known that shorter wavelengths can provide smaller opticalspot size. It is also well known that the absorption of the filmmaterials at shorter wavelength is higher. Therefore, the use of laserswith wavelengths shorter than the traditional 1 micron have theadvantages of smaller kerf width that allows smaller features to betrimmed, and of smaller HAZ that leads to much less TCR drift and Rdrift.

As disclosed in the following U.S. Pat. Nos. 5,087,987; 5,111,325;5,404,247; 5,633,736; 5,835,280; 5,838,355; 5,969,877; 6,031,561;6,294,778; and 6,462,306, those skilled in the art of lens design willappreciate the complexities of scan lenses designed for multiplewavelengths.

Many design parameters are considered and various design trade-offs suchas spot size, field size, scan angle, scan aperture, telecentricity, andworking distance are used to achieve a laser scan lens design solutionfor trimming applications. In order to achieve a small spot over a largescan field, as preferred for high speed processing of fine structuresover large areas, the scan lens must be able to focus a collimated inputbeam and image a diffraction limited laser spot over the entire field.The spot must be sufficiently round and uniform across the field toproduce uniform trim cuts within the field. The lens must also provideadequate viewing resolution to image a selected target area forcalibration and process monitoring. For through-the-lens viewing, lightis collected from the illuminated field, collimated by the scan lens,and imaged onto a detector using auxiliary on-axis optics. By utilizinga different wavelength region for target viewing and an achromatizedscan lens, efficient beam combining and splitting is possible usingconventional dichroic optical elements. Within the viewing channel, goodlateral and axial color correction is required, however small amounts oflateral color between the viewing and laser channels can be accommodatedin the scan system and small amounts of axial color between the viewingand laser channels can be accommodated with focus adjustments in thefield or in auxiliary optics. With a two mirror scan head, for example agalvanometer scan head when pupil correcting optics are not used, thescan lens must accommodate the pupil shift resulting from the separationbetween the two scan mirrors.

Relative lens capability can be determined by dividing the field size bythe imaged spot size to find the number of spots per field. Conventionalachromatized scan lenses for laser trimming, for example, the objectiveused in the GSI Lumonics W670 trim system for thick film trimming with alaser wavelength of 1.064 microns, produces a 30 micron spot over a 100mm square field and images the target with conventional white lightsources and auxiliary camera optics to a monochrome CCD camera. The W670system is capable of about 4667 laser spots over the field diagonal.Lenses in system used for thin film trimming have smaller field sizesand smaller spot sizes. For example, the scan lens used in the GSILumonics W678 trim system, also with white light viewing capability, hasa 12 micron spot over a 50 mm field, or about 4167 spots. Yet anotherthin film scan lens with a laser wavelength of 1.047 microns is used inthe GSI Lumonics M310 wafer trim system, has a 6.5 micron spot over a 1cm sq telecentric field and is capable of about 2175 spots with IR LEDilluminators with an emission band of about 860 nm to 900 nm forviewing.

To some extent, lenses or lens design forms intended for IR laserscanning, especially IR scan lenses with white light viewing, can beused or modified to other laser wavelengths, for example, with greenlasers. Reducing the wavelength theoretically reduces the spot sizeproportionally. However, considering increased lens aberrations andmanufacturing tolerances, this may not be achievable. For example, agreen version of the W670 lens produce a spot of about 20 micronscompared to 30 microns for the IR version, and the number of spots perfield is increased from 4667 to about 7000.

Conversely, it has been found that lenses designed primarily to operateat a green laser wavelength with a viewing channel at a longerwavelength can be optimized to scan a second wavelength, for example1.047 microns or 1.064 microns, producing a spot approximately scaled upby the wavelength.

The following exemplary U.S. patents are related to laser trimmingmethods and systems: U.S. Pat. Nos. 6,534,743; 6,510,605; 6,322,711;6,281,471; 5,796,392; 4,901,052; 4,853,671; 4,647,899; 4,511,607; and4,429,298.

U.S. Pat. No. 4,429,298 relates to many aspects of serpentine trimming.Basically, a serpentine resistor is formed with sequential plunge cutsand a final trim cut is made parallel to the resistor edge from the lastplunge. It describes “progressively” making plunge cuts on a resistoralternately from one end, considers maximum and minimum plunge cutlengths, a resistance threshold of the plunge cuts for the trim cut, afaster cutting speed for plunge cuts, and a structured process flow withvarious resistance and cut length tests.

There is a continuing need for improved high-speed, micromachining suchas precise trimming at all scales of operation, ranging from thick filmcircuits to wafer trimming.

SUMMARY OF THE INVENTION

An object of the present invention is to provide an improved method andsystem for high-speed, precise trimming utilizing a laser and scan lensfor use therein wherein post trim stability is improved.

In carrying out the above object and other objects of the presentinvention, a method is provided for high-speed, laser-based, preciselaser trimming at least one electrical element. Each electrical elementhas at least one measurable property and is supported on a substrate.The method includes generating a pulsed laser output with a laser, theoutput has one or more laser pulses at a repetition rate. Each laserpulse has a pulse energy, a laser wavelength within a range of laserwavelengths, and a pulse duration. The method further includesselectively irradiating the at least one electrical element with the oneor more laser pulses focused into at least one spot having a non-uniformintensity profile along a direction and a spot diameter less than about15 microns so as to cause the one or more laser pulses having thewavelength, energy, pulse duration and the spot diameter to selectivelyremove material from the at least one element along a trim path andlaser trim the at least one element while avoiding substantialmicrocracking within the at least one element. The wavelength is shortenough to produce desired short-wavelength benefits of small spot size,tight tolerance, high absorption and reduced or eliminated heat-affectedzone (HAZ) along the trim path, but not so short so as to causemicrocracking.

The focused pulsed laser output power may correspond to about 10-50 mwwith a spot diameter of less than about 15 μm. The power is scalablewith reduced spot sizes less than about 15 μm such that correspondingpower density is high enough to trim the element but sufficiently low toavoid microcracking.

Any microcracking obtained as a result of removing material from atleast a first portion of the at least one element may be insubstantialcompared to microcracking obtained upon removing material from the atleast one element, or from a portion of a second element, using at leastone other wavelength outside the range of laser wavelengths.

The removal of material from the at least one element may create a trimcut with a kerf width corresponding to the spot diameter.

The step of selectively irradiating with the one or more laser pulsesmay be carried out to at least limit formation of a heat-affected zone.

The repetition rate may be at least 10 Kilohertz.

At least one laser pulse of the laser output may have a picosecond orfemtosecond pulse width.

An array of thin film electrical elements may be trimmed, and the methodmay further include selectively micromachining one element in the arrayto vary a value of a measurable property. The step of selectivelymicromachining is suspended, and while suspended, at least one otherelement in the array is selectively micromachined to vary a value of ameasurable property. The method may further include resuming thesuspended step of selectively micromachining to vary a measurableproperty of the one element until its value is within a desired range.

The at least one element may include a resistor, and the at least onemeasurable property may be at least one of resistance and temperature.

The method may further include suspending micromachining when ameasurement of the at least one measurable property is within apredetermined range.

Still further in carrying out the above object and other objects of thepresent invention, a system is provided for high-speed, laser-based,precise laser trimming at least one electrical element. Each electricalelement has at least one measurable property and is supported on asubstrate. The system includes a laser subsystem to generate a pulsedlaser output having one or more laser pulses at a repetition rate. Eachlaser pulse has a pulse energy, a visible laser wavelength, and a pulseduration. A beam delivery subsystem accepts the pulsed laser output andincludes at least one beam deflector to position the one or more laserpulses relative to the at least one element to be trimmed, and anoptical subsystem to focus the one or more laser pulses having thevisible laser wavelength into at least one spot within a field of theoptical subsystem. The at least one spot has a non-uniform intensityprofile along a direction and a spot diameter less than about 15microns. A controller is coupled to the beam delivery and lasersubsystems to control the beam delivery and laser subsystems toselectively irradiate the at least one element such that the one or morelaser output pulses having the visible laser wavelength, the pulseduration, the pulse energy and the spot diameter selectively removematerial from the at least one element and laser trim the at least oneelement along a trim path while avoiding substantial microcrackingwithin the at least one element. The laser wavelength is short enough toproduce desired short-wavelength benefits of small spot size, tighttolerance, high absorption and reduced or eliminated heat-affected zone(HAZ) along the trim path, but not so short so as to causemicrocracking.

The focused pulsed laser output power may correspond to about 10-50 mwwith a spot diameter of less than about 15 μm. The power is scalablewith reduced spot sizes such that corresponding power density is highenough to trim the element but sufficiently low to avoid microcracking.

The laser subsystem may include a q-switched, frequency-doubled, solidstate laser having a fundamental wavelength in the range of about 1.047microns to 1.32 microns, and the visible output wavelength may be afrequency-doubled wavelength in a visible wavelength range of about 0.5microns to about 0.7 microns.

The spot diameter may be about 6 microns to about 10 microns.

The optical subsystem may include a lens that is achromatized at two ormore wavelengths. At least one of the wavelengths may be a visiblewavelength.

The system may further include an illuminator to illuminate a substrateregion with radiant energy at one or more illumination wavelengths. Adetection device may have sensitivity to the radiant energy at one ofthe illumination wavelengths wherein one of the two or more wavelengthsmay be a visible laser wavelength and the other may be the illuminationwavelength.

The optical subsystem may be a telecentric optical subsystem.

The telecentric optical subsystem may include a telecentric lens.

The repetition rate may be at least 10 Kilohertz.

At least one laser pulse of the laser output may have a picosecond orfemtosecond pulse width.

The focused spot diameter may be about 6 microns to about 10 microns atany location within the field of the optical subsystem.

The system may further include a calibration algorithm to adjustcoordinates of material to be irradiated within the at least one elementand to thereby precisely control a dimension of a region of materialremoval.

The system may further include a machine vision subsystem including avision algorithm to locate or measure at least one geometric feature ofthe at least one element.

The vision algorithm may include edge detection and the at least onegeometric feature are edges of the at least one element. The edges areused to determine width of the at least one element and to define adimension for material removal.

A material of the substrate may be a semiconductor, or may be a ceramicor glass.

The at least one electrical element may be trimmed with a tolerance of0.1% or better.

The at least one element may include a thin-film or thick-film element.

In thin-film, the material of the at least one element may be NiChrome,SiChrome or Tantulum Nitride.

An array of thin-film electrical elements may be trimmed with thesystem. The controller may include means to selectively micromachine anarray element to vary a value of a measurable property, and means tosuspend the selective micromachining while the selective micromachiningis suspended. The controller may further include means to selectivelymicromachine at least one other array element to vary a value of ameasurable property, and means to resume the selective micromachining tovary a measurable property of the array element until its value iswithin a desired range.

The system may further include a user interface, and a software programcoupled to the interface and the controller. The software program may beadapted to accept pre-trim target values for the at least one elementand to limit an electrical output being applied to the at least oneelement based on the values.

The laser may be a fast rise/fall, pulse-shaped q-switched laser.

The laser may be a picosecond or femtosecond laser.

TCR drift after trimming may be less than about 5 ppm.

The method may further include the step of spatially shaping the one ormore laser pulses to form one or more spatially-shaped laser pulseswhich are focused into the at least one spot. The step of spatiallyshaping may be performed with the optical subsystem and may include atleast one dispersion-compensated optical element.

Yet, still further in carrying out the above object and other objects ofthe present invention, a method of high-speed, laser-based, preciselaser trimming at least one electrical element having at least onemeasurable property is provided. The at least one element is supportedon a substrate. The method includes generating a pulsed laser outputwith a laser. The output has one or more laser pulses at a repetitionrate. Each laser pulse has a pulse energy, a laser wavelength within arange of laser wavelengths, and a pulse duration. The method furtherincludes selectively irradiating the at least one electrical elementwith the one or more laser pulses focused into at least one spot havinga non-uniform intensity profile along a direction and a spot diameterless than about 15 microns so as to cause the one or more laser pulseshaving the wavelength, energy, pulse duration and the spot diameter toselectively remove material from the at least one element and laser trimthe at least one element along a trim path while avoiding substantialmicrocracking within the at least one element. The temporalcharacteristics of the one or more laser pulses produce desired benefitsof small kerf size, tight tolerance, and reduced or eliminatedheat-affected zone (HAZ) along the trim path.

A temporal characteristic of the one or more laser pulses may include asubstantially square pulse shape, fast rise and fall times, and a pulseduration less than about 30 nsec.

The pulse duration may be in either the femtosecond or picosecond range.

The laser wavelength may be a visible or near IR wavelength.

Yet, still further in carrying out the above object and other objects ofthe present invention, a system of high-speed, laser-based, preciselaser trimming at least one electrical element having at least onemeasurable property is provided. The at least one element is supportedon a substrate. The system includes a subsystem including a laser forgenerating a pulsed laser output. The output has one or more laserpulses at a repetition rate. Each laser pulse has a pulse energy, alaser wavelength within a range of laser wavelengths, and a pulseduration. The system further includes a subsystem for selectivelyirradiating the at least one electrical element with the one or morelaser pulses focused into at least one spot having a non-uniformintensity profile along a direction and a spot diameter less than about15 microns so as to cause the one or more laser pulses having thewavelength, energy, pulse duration and the spot diameter to selectivelyremove material from the at least one element and laser trim the atleast one element along a trim path while avoiding substantialmicrocracking within the at least one element. The temporalcharacteristics of the one or more laser pulses produce desired benefitsof small kerf size, tight tolerance, and reduced or eliminatedheat-affected zone (HAZ) along the trim path.

The laser may be a fiber laser.

The subsystem for generating the pulsed laser output may include amaster-oscillator/power amplifier.

The laser may be a femtosecond or picosecond laser.

The wavelength may be a visible or near IR wavelength.

Yet, still further in carrying out the above object and other objects ofthe present invention, a multiple element achromatic scan lens isprovided. The multiple element achromatic scan lens is configured toprovide a scan field encompassing a scan area of about 25 mm×50 mm, agreen wavelength laser spot size less than 20 microns to about 8 micronsor less, wherein a scan field diameter measures up to about 7000 spots,and a viewing channel with a bandwidth of at least 40 nm to 100 nm ormore, wherein each element is composed of a glass type having an indexof refraction, n_(n), and a dispersion, v_(n). The scan lens includes,in succession from a side of incident light: a first bi-concave element(L1) and a first cemented doublet including plano-concave and bi-convexelements (L2, L3), a cemented surface of the first cemented doubletbeing concave away from the incident light, wherein n₂<n₃, v₂>v₃, and v₂represents an anomalous dispersion. The scan lens further includes asecond cemented doublet including plano-concave and bi-convex elements(L4, L5), a cemented surface of the second cemented doublet beingconcave away from the incident light, a first negative meniscus element(L6) being concave toward the incident light (L6), and a first bi-convexelement (L7). Values of n_(n) and v_(n) for each glass element arecharacterized by the relationships: Index Dispersion L1 n₁ > 1.58 v₁ <40 L2 1.85 > n₂ > 1.5 v₂ < 50 L3 n₃ > 1.58 v₃ < 40 L4 n₄ > 1.61 v₄ < 35L5 1.85 > n₅ > 1.5 v₅ > 40 L6 n₆ > 1.61 v₆ < 35 L7 1.85 > n₇ > 1.5 v₇ >40

Airspace between the second cemented doublet (L4/L5) and the firstnegative meniscus element (L6) may be set to zero thickness and elementsL4, L5, and L6 may form a triplet (L4/L5/L6).

The second cemented doublet (L4/L5) may be replaced with a singleelement (L4).

Values of n_(n) and v_(n) for each glass element may be: IndexDispersion L1 1.65 33.8 L2 1.61 44.3 anomalous L3 1.81 25.4 L4 1.81 25.4L5 1.69 53.3 L6 1.81 25.4 L7 1.62 56.9

The above object and other objects, features, and advantages of thepresent invention are readily apparent from the following detaileddescription of the best mode for carrying out the invention when takenin connection with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1 a-1 b are schematic views which illustrate current flow linesbefore and after laser trimming, respectively;

FIG. 1 c is a chart which illustrates the effect of various cut types onseveral trim parameters;

FIG. 2 a is a schematic view of an array of chip resistors arranged inrows and columns and which illustrates results using laser trimmingsteps in accordance with an embodiment of the present invention;

FIG. 2 b is a block diagram flow chart further defining trimming stepscorresponding to FIG. 2 a;

FIG. 3 is a block diagram flow chart further defining the trimmingoperations of FIGS. 2 a and 2 b in a system of the present invention;

FIG. 4 a is a schematic view of an array of chip resistors arranged inrows and columns and which illustrates results using laser trimmingsteps in accordance with another embodiment of the present invention;

FIG. 4 b is a block diagram flow chart further defining trimming stepscorresponding to FIG. 4 a;

FIG. 5 is a block diagram flow chart further defining the trimmingoperations of FIGS. 4 a and 4 b in a system of the present invention;

FIG. 6 a is a schematic view of a laser trimming system which may beused in at least one embodiment of the invention;

FIG. 6 b is a schematic view of a resistor which has geometricproperties to be measured, specifically edges of the resistor, usingdata obtained with the system of FIG. 6 a;

FIG. 7 is a graph which shows position of a laser beam versus timeduring scanning of a resistor array in one embodiment wherein a fastscan with a solid state deflector is superimposed with aelectro-mechanical linear scan to selectively form the cuts of eitherFIG. 2 or FIG. 4 at increased speed;

FIG. 8 is a schematic view of a system delivering multiple focused beamsto at least one resistor so as to increase trimming speed;

FIG. 9 is a schematic view of a system which provides multiple beams toat least one resistor in a laser trimming system;

FIG. 10 is an electron micrograph (reproduced from FIG. 11 of U.S. Pat.No. 6,534,743) of kerf showing microcracks formed in the substrate of aresistor trimmed by a Gaussian beam produced by a UV laser;

FIG. 11 is a view of a thin film resistor processed by a green laser;

FIG. 12 is a view of kerf width 6-7 microns which has been achieved by agreen laser with newly designed optics;

FIG. 13 is a view of a chip resistor trimmed by a green laser;

FIG. 14 is a 3D layout view of an 8 micron Green/IR scan lens for use inone embodiment of a laser system of the present invention;

FIG. 15 are graphs of pulses generated by a fast rise/fall, pulse-shapedlaser and a Gaussian-pulsed laser;

FIG. 16 a is a top plan schematic view of a conventional laser trim witha relatively large HAZ;

FIG. 16 b is a top plan schematic view of an ultra-fast laser trim withlittle or no HAZ;

FIG. 17 a is a graph of a pulse with a Gaussian profile;

FIG. 17 b is a graph of a pulse with a flat-top;

FIG. 18 is a block diagram schematic view of an example of a resonatordesign based on a disk laser for use in one embodiment of the presentinvention;

FIG. 19 is a block diagram schematic view of an example of a thin diskregenerative amplifier to use in one embodiment of the presentinvention; and

FIG. 20 is a block diagram schematic view of a typical systemconfiguration of a regenerative thin disk amplifier for use in oneembodiment of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT(S)

High-Speed Serpentine Trimming Process

In resistor trimming, the cuts direct the current flowing through theresistive material along a resistance path. Fine control and adjustmentof the cut size and shape change the resistance to a desired value, asillustrated in FIGS. 1 a-1 c. Typically, chip resistors are arranged inrows and columns on a substrate. FIG. 2 a shows an arrangement wherein arow of resistors R1,R2, . . . RN is to be processed. A probe array,having a probe 200 and depicted by arrows in FIG. 2 a, is brought intocontact 202 with the conductors of a row of resistors. A matrix switchaddresses the contacts for a first pair of conductors (e.g.: contactsacross R1) and a series of cuts and measurements is performed to changethe resistance between the conductor pair to a desired value. When thetrimming of a resistor is complete, the matrix switches to a second setof contacts at the next row element (e.g.: R2) and the trimming processis repeated. When a complete row of resistors (R1 . . . RN) has beentrimmed, contact is broken between the contacts and the probe array. Thesubstrate is then relatively positioned to another row, the probe arrayis brought into contact, and a second row is processed in the manner asthe preceding row.

The trimming of serpentine thin film resistors, for instance asillustrated in FIG. 1 c, involves laser processing to createinterdigitated cuts in an area of resistive material between conductors.The interdigitated cuts direct current flowing through the resistivematerial along a serpentine path that wraps around the cuts. Thisgeometry allows a wide range of resistances to be created with a singleareal film/conductor layout. The approach outlined above would process asequence of serpentine cuts with measurement steps at a resistor siteand then move to the next resistor.

Referring to FIG. 2 a, an initial laser position for any cut is depictedas 205, and a beam positioner directs the beam along the linear paththrough the resistor material. In accordance with the present invention,a new paradigm trims a leg on a first resistor (e.g. trim cut 204 of R1)and measures the resistance. If the resistance is below a predeterminedthreshold, similar collinear trims across other resistors R2 . . . RN inthe row are made. A completed collinear trim along the row isillustrated at 210 in FIG. 2 a, and the corresponding block 220 isfurther defined in FIG. 2 b. In at least one embodiment of the presentinvention, a subset of resistors may be measured to determine thin filmconsistency across the substrate, but if the thin film is of knownconsistency one measurement may be sufficient.

The next collinear group of cuts along resistors of the row is made inthe same manner as shown at 211 of FIG. 2 a and further defined at block221 of FIG. 2 b, the resistor RN being trimmed initially. The process isrepeated as shown in 212-213 of FIG. 2 a with corresponding furtherdefined at blocks 222-223 of FIG. 2 b. If a measurement shows that athreshold has been crossed, trimming of the row R1 . . . RN proceedswith measurement of each resistor so as to trim to value beforeswitching to the next resistor (depicted as 214 at block 224).

Limiting the number of measurements and maintaining a collinear trimtrajectory both increase trim speed.

The flowchart of FIG. 3 further defines steps, corresponding to FIGS. 2a-2 b, and additional processing steps used in a trimming system (e.g.:indexing and loading).

In at least one embodiment, cutting steps may be carried out based uponpre-determined information. By way of example, for some resistor types,a first series of elements may be cut before resistance is measured, thesequence based on pre-determined parameters of the resistor (e.g.:geometry) and/or known film properties, (e.g: sheet resistance).Similarly, a number of non-measured cuts may be determined in a learnmode at the first resistor (e.g: including at least one measurement, oriterative measurements). In one learn mode, iterative measurements aremade and the number of non-trim cuts is determined based on themeasurements and material properties. In at least one embodiment anumber of the non-measured cuts may be calculated.

For example, four cuts may be made without measurement. Referring toFIG. 4 a, an initial condition 410 is illustrated wherein probes areplaced in contact 202 with the row as in FIG. 2 a. Referring to FIG. 4b, the initial condition is further defined at block 420. By way ofexample, FIGS. 4 a-4 b illustrate an embodiment of the trimming processwherein initially four cuts 411 are made without any measurement. Asshown in FIG. 4 b, block 421 defines a predetermined number of cuts(e.g: four), without measurement, based on at least one pre-trim valueor condition. The scan path for completing four cuts is depicted at 405.Then the first resistor R1 in the row is trimmed at 406 and measured todetermine if the target value is reached. If not, the remainingresistors R2 . . . RN are cut (e.g.: without measurement) as depicted at412, further defined by block 422.

Then the process is repeated, beginning with trimming 407 of RN, andthen cutting of R[N−1] to R1 as shown at 413 and further defined byblock 423. Hence, with each change in direction either R1 or RN istrimmed, and if the target value is not reached the remaining resistorsR2 . . . RN or R[N−1] . . . R1, respectively, are cut. A final stepresults after R1 or RN reaches a target value. Each resistor isconnected and trimmed sequentially, illustrated at 414 and furtherdefined by block 424.

The flowchart of FIG. 5 further defines steps corresponding to FIGS. 4a-4 b, and additional processing steps used in a trimming system (e.g.:which includes the steps of indexing and loading).

In one embodiment, wherein pre-determined information is obtained usingiterative measurements, pre-trim values are provided. The values may bespecified by an operator, process engineer, or otherwise obtained. Thesoftware provides capability for specifying or using the pre-trim targetvalues so that the applied test voltage and/or current is controlled.This feature is useful for avoiding voltages that are high enough todamage the part over the wide range of resistance change associated withserpentine trimming. When using a fast resistor measurement system in anembodiment of the invention, the voltage applied to the resistor formeasurement is decreased for the initial low resistance cut to limitcurrent through and potential damage to the resistor. As subsequent cutsare made and the resistance increases, the measurement voltage isincreased.

The exemplary trim and cut sequences of FIGS. 2 a and 2 b and 4 a and 4b may be modified so as to allow for variations in material propertiesand other process parameters and tolerances.

For example, in at least one embodiment of the present invention,additional steps may be utilized when a measured trim cut reaches thetarget value and length is within a predetermined margin of the maximumallowed cut length. Within the margin, variation in the materialproperties may leave some trim cuts short of the target value andrequire additional cuts.

In a first mode, trim cuts are made sequentially in a row of elementsand the location of elements not reaching the target value are saved.With subsequent trim cuts, the remaining elements at the saved locationsare trimmed to the target value.

In a second mode, based on the length of the first element trimmed tovalue, the cut length is reduced to prevent the target value from beingreached and non-measurement cuts are processed to complete the row.Subsequent trim cuts bring all elements in the row to the target value.

In a third mode, the length of at least one prior cut on an element ismodified to prevent subsequent cuts from falling into the marginalcondition. In at least one embodiment, additional steps may be utilizedwhen the value of a measured trim cut is within a predetermined marginof the target value. Within the margin, variation in the materialproperties may leave some elements beyond the target value using fullnon-measurement cuts.

In a first mode, trim cuts are made sequentially in a row of elementsand the location of elements not reaching the target value are saved.With subsequent trim cuts, the remaining elements at the saved locationsare trimmed to the target value.

In a second mode, based on the value measured in the first element, thecut length is reduced to prevent the target value from being reached andnon-measurement cuts are processed to complete the row. Subsequent trimcuts bring all elements in the row to the target value.

In a third mode, the length of at least one prior cut on an element ismodified to prevent subsequent cuts from falling into the marginalcondition.

Experimental data indicates improvements in throughput by cutting allthe resistors in a row as shown in FIGS. 2-4, as opposed to theconventional single resistor trim technique. By way of example,approximate results are shown in the table below: 32 RESISTOR ROW, 20CUTS PER RESISTOR Laser Q-Rate (KHz) Single Resistor Trim (Sec) Row Trim(Sec)  5 39 28 10 27 16 20 20 10

The overall trim speed increases with an increasing number of resistorsin a row, fewer measurements, and with reduced time for final (i.e.,fine) trimming.

Further, each resistor has additional time to recover from lasergenerated energy. The sequence of cuts may be determined to managetemperature change in an element (e.g. reduce maximum elementtemperature during cutting). For example, with reference to FIG. 4 a,the sequence 405 may be reversed so that a set of cuts are made startingnear the center of an element and progressing to an end of the elementapproaching the conductor and probe. Other sequences, suitable sequencesmay be used (e.g: any sequence of non-adjacent cuts having advantage forthermal management). Preferably, a second element may be cut prior to anadditional step of measuring.

Range of resistance change for serpentine cuts varies from about 1 orderof magnitude (e.g: 10×), two orders of magnitude typical (100×), and upto about 500× with current materials.

Laser Trimming Systems

In at least one embodiment of the invention a laser trimming system maybe first calibrated using a method as described in “Calibrating LaserTrimming Apparatus”, U.S. Pat. No. 4,918,284. The '284 patent teachescalibrating a laser trimming apparatus by controlling a laser beampositioning mechanism to move a laser beam to a desired nominal laserposition on a substrate region, imprinting a mark (e.g., cutting a line)on a medium to establish an actual laser position, scanning theimprinted mark to detect an actual laser position, and comparing theactual laser position with the desired nominal position. Preferably, thelaser beam operates on one wavelength, and the mark is scanned with adetection device that operates on a different wavelength. The detectiondevice views a field that covers a portion of the overall substrateregion, and determines the position of a mark within the field. The '284patent further teaches determining where a beam position is in relationto a camera field of view.

Other calibration techniques may be used alone or in combination withthe '284 method. For instance, U.S. Pat. No. 6,501,061 “LaserCalibration Apparatus and Method,” discloses a method of determiningscanner coordinates to accurately position a focused laser beam. Thefocused laser beam is scanned over a region of interest (e.g. anaperture) on a work-surface by a laser scanner. The position of thefocused laser beam is detected by a photodetector either atpredetermined intervals of time or space or as the focused laser beamappears through an aperture in the work surface. The detected positionof the focused laser beam is used to generate scanner position versusbeam position data based on the position of the laser scanner at thetime the focused laser beam is detected. The scanner position versusbeam position data can be used to determine the center of the apertureor the scanner position coordinates that correspond with a desiredposition of the focused laser beam.

Subsequent to system calibration, which preferably includes calibrationof numerous other system components, at least one substrate havingdevices to be trimmed is loaded into the trimming station.

Referring to FIG. 6 a, partially incorporated from the '284 patent, animproved laser trimming system may include an infrared laser 602,typically having a wavelength from about 1.047 microns −1.32 micronswhich outputs a laser beam 603 along an optical path 604 to and througha laser beam positioning mechanism 605 to a substrate region 606. Forapplication to trimming of thin film arrays, a preferred wavelength ofabout 0.532 microns may be obtained by doubling the output frequency ofthe IR laser using various techniques known in the art and commerciallyavailable.

The laser beam positioning mechanism 605, preferably includes a pair ofmirrors and attached respective galvanometers 607 and 608 (variousavailable from the assignee of the present invention). The beampositioning mechanism 605 directs the laser beam 603 through a lens 609(which may be telecentric or non-telecentric, and preferablyachromatized at two wavelengths) to a substrate region 606, over afield. The X-Y galvanometer mirror system may provide angular coverageof the entire substrate if sufficient precision is maintained.Otherwise, various positioning mechanisms may be used to providerelative motion between the substrate and the laser beam. For instance,a two-axis precision step and repeat translator illustratedschematically as 617 may be used to position the substrate within thefield of galvanometer based mirror system 607,608 (e.g.: in the X-Yplane). The laser beam positioning mechanism 605 moves the laser beam603 along two perpendicular axes thereby providing two dimensionalpositioning of the laser beam 603, across the substrate region 606. Eachmirror and associated galvanometer 607, 608 moves the beam along itsrespective x or y axis under control of a computer 610. Illuminationdevices 611 which may be halogen lights or light emitting diodes producevisible light to illuminate substrate region 606.

A beam splitter 612 (a partially reflective mirror) is located withinthe optical path 604 to direct light energy reflected back along thepath 604 from the substrate region 606 to a detection device 614. Thedetection device 614 includes a camera 615, which may be a digital CCDcamera (e.g.: color or black/white) and associated frame grabber 616 (ordigital frame buffer provided with the camera), which digitizes thevideo input from the television camera 615 to obtain pixel datarepresenting a two-dimensional image of a portion of the substrateregion 606. The pixel data are stored in a memory of the frame grabber616, or transmitted, for instance, by a high speed link, directly to thecomputer 610 for processing.

The beam positioning subsystem may include other optical components,such as a computer-controlled, optical subsystem for adjusting the laserspot size and/or automatic focusing of the laser spot at a location ofthe substrate.

In applying the invention to thin film trimming of resistor arrays, atleast one thin film array is supported by the substrate. The calibrationdata obtained as above is preferably used in combination with anautomated machine vision algorithm to locate an element (e.g. resistorR1) of the array and measure the location of at least one geometricfeature of an element 620 of FIG. 6 b. For instance, the feature may beone of the horizontal edges 621 (e.g.: an edge parallel to theX-direction), and one of the vertical edges 622 (e.g.: an edge parallelto the Y direction) found by analysis of pixel data in memory using oneof numerous available edge detection algorithms. The edges may includemultiple edge measurements along the entire perimeter of a resistor, asample of the edges, or edges from numerous resistors of the array. Thewidth of the resistor is then determined which may be used to define thecutting length, typically as a predetermined percentage of the width.Preferably, the edge information is obtained automatically and used withcalibration data to control the length of each cut within the row R1 . .. RN, for example. Other measurement algorithms may also be used wheresuitable, for instance image correlation algorithms or blob detectionmethods.

Calibration may be applied at one or more points along the cut. In atleast one embodiment the starting point of at least one cut will becorrected with calibration data.

Preferably, the length and the starting point of a plurality of cuts inFIGS. 2 and 4 will be corrected.

Most preferably, the length and starting point of all cuts in FIGS. 2 aand 4 a will be corrected.

In one embodiment, the first resistor (e.g.: R1 or RN) will becalibrated, and a corresponding correction applied to all resistors(e.g.: R1, . . . , RN) of the row.

Complete automation is preferred. However, a semi-automatic algorithmwith operator intervention may be used, for instance where agalvanometer is positioned so that the array element 620 is in thefield, then the beam is sequentially positioned along the elementinteractively and the intensity profile (or derivative or intensity)observed on a display 630 by an operator.

The use of the calibration information to adjust coordinates within thearray region is valuable for improving the precision of laser beampositioning without throughput degradation. Measurements of resistorwidth and the alignment data is useful for both controlling the lengthof a cut and for correcting deviations from linearity andnon-orthogonality of the array relative to the scanner X,Y coordinatesystem. The use of the calibration data for geometric correction isparticularly well suited for use in laser trimming systems having one ormore linear translation stages.

Geometric correction does not necessarily replace other useful systemdesign features including f-theta lens linearity, fan beam compensationetc. The system tolerance stack-up may generally be used to determinetradeoffs between the number of cut calibration locations based onexpected position error. When fanning out the beam, especially withlarge spacing across many resistors, only one is calibrated and aligned.For instance, when the spacing between resistors is relatively large, asingle cut may be calibrated and aligned. Resulting errors in positionare anticipated at elements, to be mitigated in part with system design,f-theta linearity, fan spread compensation etc. Closely spaced cuts of atransverse fan are expected to have smaller errors compared with on axisfan.

Further Throughput Improvements—Optical Techniques

In at least one embodiment of the present invention the throughput maybe further improved by increasing the effective scan rate using one ormore of the techniques below.

Further increases in processing speed with collinear trims can beaccomplished with faster jumps across trim gaps between the resistors ofa row. One such gap 216 is shown in FIG. 2 a. Referring to FIG. 7, in atleast one embodiment of the invention, a single-axis Acousto-Optic BeamDeflector (AOBD) superimposes a saw tooth linear scan pattern 701 as thegalvanometer scans across the row at a constant velocity 702. Duringtrimming the AOBD scans in retrograde motion 703, and, between trims,provides a fast jump 704 to the next cut. This allows the galvanometerto scan at constant velocity and minimizes the contributions of jumps tothe total process time.

The use of acousto-optic deflectors in combination with galvanometersfor speed improvements is known in the art. For instance, U.S. Pat. No.5,837,962 discloses an improved apparatus for heating, melting,vaporizing, or cutting a workpiece. A two-dimensional acousto-opticdeflector provided about a factor of five improvement in marking speed.

U.S. Pat. No. 6,341,029, which is incorporated by reference in itsentirety, shows in FIG. 5 thereof an embodiment having severalcomponents which may be used in a complete system when practicing thepresent invention in a retrograde mode for increased speed. In the '029patent, acousto-optic deflectors and galvanometers, with an associatedcontroller, are shown for dithering CW beams for laser patterning. Alsosee col. 3, line 47 and col. 4 of the '029 patent for additional detailsregarding system construction.

The arrangement of the '029 patent may be readily adapted, usingavailable techniques, so as to provide modifications of opticalcomponents and scan control profiles so as to practice the retrogradescanning technique of the present invention, preferably with additionalhardware calibration procedures.

In another embodiment of the invention, the collinear trims onserpentine resistors may be accomplished in a parallel fashion withmultiple spots along the row. A fan-out grating or other multi-beamgenerating device is used to create a spot array so that 2 or more spotsare formed and aligned according to the resistor pitch along the row.For example, U.S. Pat. No. 5,521,628 discloses the use of diffractiveoptics to simultaneously mark multiple parts. The multiple beams may belower power beams generated from a more powerful laser source, orcombined beams from multiple sources. The scan system scans the multiplebeams and forms spots through a common scan lens simultaneously acrossmultiple resistors. The trim process is similar to the single spotmethod with two or more cuts in parallel during non-measurement cuttingsteps. When the threshold is reached, the system converts to a singlespot mode to serially trim each resistor to value.

Similarly, the collinear trims on serpentine resistors may beaccomplished in a parallel fashion with multiple spots formed on atarget to make parallel cuts. A fan-out grating or other multi-beamgenerating device is used to create a spot array so that 2 or more spotsare formed, the spots being aligned to an element with predeterminedspacing between cuts. If a predetermined number of cuts are performed(e.g. four as shown in FIG. 4 a) then, in one embodiment, the number ofpasses could be reduced by 50% (e.g.: a single pass in each direction).This embodiment may be most useful if resistor process variations andtolerances are well established. The grating may be in an opticallyswitched path so as to selectively form multiple spots or a single spot.

Published U.S. patent application No. 2002/0162973 describes a methodand system for generating multiple spots for processing semiconductorlinks for memory repair. Various modifications in the lens system anddeflector system may be used to generate multiple spots for use in thepresent invention.

In one embodiment, a single laser pulse is used to trim up to tworesistors at one time (e.g., no, one or two cuts). Referring to FIG. 8,two focused spots 801,802 are formed on two cuts by spatially splittingthe single collimated laser beam 803 into two diverging collimated beams804,805. Fine adjustment of the differential frequency controls spotseparation. The use of acousto-optic devices for spatially splittingbeams in material processing applications is known in the art. Forexample, Japanese patent abstract JP 53152662 shows one arrangement fordrilling microscopic holes using a multi-frequency deflector havingselectable frequencies f1 . . . fN.

A laser 806 of FIG. 8 is pulsed at a predetermined repetition rate. Thelaser beam goes through relay optics 807 that forms an intermediateimage of the laser beam waist into the acoustic optic modulator (AOM)aperture. The AOM 808, which operates in the Bragg regime, preferably isused to controllably generate the two slightly diverging collimatedfirst order diffraction laser beams and control the energy in each beam.The AOM is driven by two frequencies, f1 and f2 where f1=f0+df andf2=f0−df where df is a small percentage of the original RF signalfrequency f0. The angle between the two beams is approximately equal tothe Bragg angle for f0 multiplied by 2(df/f0). The AOM controls theenergy in each of the laser beams by modulating the signal amplitudes oftwo frequency components, f1 and f2, in the RF signal 812 and makingadjustments for beam cross-coupling.

After exiting the AOM 808, the beams go through an optional beamrotation control module 809 to rotate the beam 90 degrees so as toorient the beam in either X or Y. In one embodiment, a prism is used forthis rotation, though many rotation techniques are well known asdescribed in related U.S. patent publication No. 2002/0170898.

Next, the beam goes through a set of optics to position the beam waistand set the beam size to be appropriate for the zoom optics andobjective lens 810. The zoom optics also modify the angle between thetwo beams, therefore the angle between the two beams exiting the AOM 808has to be adjusted depending on the zoom setting to result in thedesired spot separation at the focal plane. Next, the laser beams enterthe objective lens 810 which provides a pair of focused spots 801,802 ontwo resistors. The two spots are separated by a distance that isapproximately equal to the focal length of the lens 810 times the anglebetween the two beams. The retrograde and parallel methods can becombined for collinear trimming on serpentine resistors. For example, abeam is scanned by an AOBD then split into a pair and scanned across thefield. Two adjacent resistors are trimmed simultaneously and the jump isfrom resistor N to resistor N+2 to the next pair or resistors.

Alternatively, or with a two-dimensional deflector, a pair of spots maybe produced in a direction orthogonal to the serpentine scan direction.For instance, with relatively simple control and programming of aone-dimensional AOBD, the deflector may be used (with appropriate outputpower control) to simultaneously produce at least two of the four beamsused for making four cuts as shown in FIG. 4 a. As such, the scan timefor the cuts may be reduced by 50%. As a result of programmabledeflection, the AOBD may be preferred over a fan out grating. Themultiple spots may also be produced during coarse and fine trim asneeded.

FIG. 9 illustrates schematically an exemplary embodiment of an improvedlaser trimming system having a module 901 from FIG. 8 added for eitherretrograde scanning, parallel processing, or a combination thereof. Forexample, a signal 902 from the computer 610 may be used to control theAOBD or other solid state deflector 808 in one or more axes, and thebeam rotation module 809, if provided. The module 901 may include relayoptics 807 and other beam shaping components. Preferably, at least oneAOBD is used so as to provide considerable flexibility and ease of use,for example with a digital RF generator providing the control signal 812from the computer 610.

Furthermore, techniques for forming elongated or elliptical spots can beemployed with this invention to further increase processing speed orquality. Improvements in trimming speed associated with spot shaping aredescribed in co-pending published U.S. patent application No.2002/0170898.

Numerous other design alternatives may be used in at least oneembodiment of the invention for enhancing system performance and ease ofuse. For example, alternatives include but are not limited to thefollowing:

1. The system may provide for computer-controlled spot size and/or focusadjustments. U.S. Pat. No. 6,483,071, assigned to the assignee of thepresent invention, illustrates an optical subsystem providing for bothspot size control and dynamic focus for laser based memory repair.

2. Another alternative is control of beam energy with a variable beamattenuator. The attenuator may be an acousto-optic deflector (ormodulator). Neutral density filters or polarization-based attenuatorsmay be used, whether manually or automatically adjusted. In U.S. Pat.No. 6,518,540 a suitable variable attenuator is shown, by way ofexample, having a rotating half waveplate and a polarization-sensitivebeam splitter.

3. The pulse width may be varied using methods known to those skilled inthe art, with the understanding that the energy of a q-switched laserwill vary with repetition rates, particularly at high repetition rates.For dynamic trimming, wherein a measurement is performed between pulses,it may be preferred to maintain substantially constant pulse energy. Amethod for pulse energy control is disclosed in the U.S. Pat. No.6,339,604 patent which reduces the variation in energy at the target asthe trimming speed is decreased (e.g.: larger pulse temporal spacing),corresponding to periods of precision measurement when the resistancevalue approaches the pre-determined target value.

4. In at least one embodiment, a diode-pumped, frequency-doubled, YAGlaser is used to trim the resistor array. The output wavelength of 532nm resulted in low drift, absence of microcracking, and negligibleheat-affected zone when compared to other wavelengths. A pulse width ofabout 25-45 ns may be preferred, with less than 30 ns typical. Thepreferred maximum laser repetition rate will be at least 10 KHz. Thepulse width, much less than typical for thick film systems, provides forthin film material removal at a relatively high repetition rate.Preferably, the maximum available pulse energy at the reduced pulsewidths and high repetition rates will allow for losses associated withthe diffractive optics (e.g: grating or AOBD) so that multiple spots maybe provided.

5. The laser may be focused to an approximate, diffraction-limited, spotsize. The spot size will typically be less than about 30 microns orless, with a preferred spot size less than about 20 microns, and a mostpreferred spot size in the range of about 6-15 microns, for instance,10-15 microns.

6. In the illustrated embodiments of the invention, serpentine cuts areillustrated as a series of parallel interdigitated cuts. However, it isto be understood that application of the present invention is notrestricted to forming parallel cuts. Trimming or micromachining so as toproduce a plurality of non-intersecting cuts with a reduced number ofmeasurements is considered to be within the scope of the invention.

7. Further, embodiments of the invention are not restricted to thin filmresistor measurements, but are applicable to other micromachiningapplications wherein a physical property is measurable. The measurementis not restricted to electrical measurements, but may be temperaturemonitoring (for instance, with an infrared sensor), stress, vibration,or other property.

As described herein, a comparative application study was conducted byusing three types of lasers, i.e., a conventional IR laser 1.064 μm, agreen laser 0.532 μm, and a LV laser 0.355 μm. The results of the studyclearly showed that the green laser gives the same or better resultsthan the UV laser in terms of TCR drift and resistance toleranceachieved. However, the samples processed by UV lasers are easy to havemicrocracking in the cut, like those indicated in FIG. 10.

By way of example, a pulsed laser output of about 30 mW was applied tothe resistor material over a spot size of about 13 microns on thesurface. The wavelength was 0.532 microns. Favorable results,particularly absence of microcracking, were found with the greenwavelength. Laser operation may be carried out in a range of about 10 mwto about 50 mw over the 13 micron spot diameter.

The corresponding power density (in Watts/cm²) is a function of the spotsize, and the laser output power in a pulse may be scaled accordingly asthe spot size is changed. For instance, the laser power (in mW) in apulse may be reduced by 4-times if the spot size is 6 microns.

Though a wavelength of 0.532 microns was demonstrated with favorableresults, other wavelengths may be utilized. However, embodiments of thepresent invention avoid wavelengths so short as to cause substantialmicrocracking.

Kerf width as small as 6 microns has been achieved with newly designoptics, shown in FIG. 12. Typically, a kerf width around 12 microns canhandle chip size down to 0402 and 0201. FIG. 13 shows a 0402 resistorprocessed by a green laser.

Microcracking in cuts by UV lasers can be extended inside the filmcausing R and TCR drifts. It becomes more severe and pronounced in thenewer 0402 and 0201 chip resistors due to thinner substrate used.Microcracking propagates and results in catastrophic failure in thesubstrate. Therefore, it is apparent that when the laser wavelengthbecomes too short, for example, into the UV region, the UV processinghas the disadvantages of microcracking and instability caused by thecracking (i.e., drifts in R and TCR due to the cracking and itspropagation in the film material).

Beam homogenization of a UV beam has been proposed (U.S. Pat. No.6,534,743). According to this patent, it reduces the number ofmicrocracks, but does not completely eliminate microcracking.

In addition, UV lasers are intrinsically less stable due to the need oftwo non-linear crystals rather than one. Therefore, UV lasers are moreexpensive than green lasers. Other disadvantages of UV lasers forresistor trimming include substrate damage and sensitivity to beamprofile, that make the process unstable.

Data shown herein indicates that there is no advantage by using UVlasers in trimming these chip resistors. Green lasers have achieved assmall kerfs and TCR as UV lasers can. Shown in FIG. 11 is the partprocessed by a green laser.

With this new capability of 6 micro kerf, there is no doubt that thegreen laser wavelength is short enough to process any future chipresistors from the optical point of view of small spot size.

Therefore, green lasers with a Gaussian beam shape have every advantageof UV lasers have without the risks associated with UV laser processinglike microcracking and instability.

The preferred wavelength should be just short enough to produce thedesirable benefits of short wavelengths like smaller spot sizes, tighttolerance and high absorption, but not too short to cause microcracking.

Various embodiments of the present invention will also generally avoidsubstantial increases in capital and operating costs, processinstability, complexity and instability. By way of example, suchbenefits of the present invention result from avoidance of UVwavelengths (so short to cause substantial microcracking) and theassociated optical components hardware for 3^(rd) harmonic generation.Further, auxiliary beam shaping optics for producing a uniform spotdistribution are not required when practicing embodiments of the presentinvention.

Therefore, the purpose in one embodiment of this invention is the use ofa green laser for the trimming.

Some features of this embodiment are:

-   -   1. The use of a green laser to laser-trim to achieve the small        spot size and high absorption needed for processing smaller chip        sizes, but to avoid the possibility of generating microcracking        and damage to the substrate.    -   2. The use of newly designed optics for the green wavelength as        a means to materialize the green laser processing capability.        The optics are described in greater detail hereinbelow taken        together with FIG. 14.    -   3. The use of a high precision beam positioning system as a        means to materialize the green laser processing capability.    -   4. The use of a trimming system measuring and testing a        subsystem as a means to materialize the green laser processing        capability.

It is desirable for a thin film hybrid trim system to have a scan fieldencompassing a scan area of about 25 mm×50 mm with a spot size with agreen laser less than 20 microns, preferably the spot size is less than12 microns, most preferably a spot of 8 microns or less with about 7000spots across the field diameter; and have a viewing channel with abandwidth of at least 40 nm, preferably 100 nm, and most preferably >100nm. The viewing channel may be a portion of the white light spectrumabove about 550 nm selected with a band pass or high pass opticalfilter. The viewing channel may be selected by the emission spectrum ofan LED illuminator. It is also desirable for scan lens producing an 8micron green spot at 532 nm across the field to also produce a spot at1.064 microns of about 17 microns across the field.

To meet the requirements of a scan area of 25 mm×50 mm, an 8 micron spota 532 nm, a 17 micron spot at 1.064 nm with a selected viewing channel,the following lens form has been found to be effective.

It is to be understood that elements described as having plano surfacesand may be true planar surfaces, or approximately planar with curvedsurfaces having relatively long radii that do not contribute substantialoptical power.

A multiple element achromatic scan lens comprising in succession from aside of incident light:

With n₂<n₃

And v₂>v₃

Preferred Solution (Shown in FIG. 14)

A first bi-concave element (L1)

A first cemented doublet including plano-concave and bi-convex elements(L2, L3), the cemented surface concave away from the incident light

A second cemented doublet including plano-concave and bi-convex elements(L4, L5), the cemented surface concave away from the incident light

A first negative meniscus element concave toward the incident light (L6)

A first bi-convex element (L7)

Triplet Solution

With the airspace L5/L6 removed to create a triplet:

A first bi-concave element (L1)

A first cemented doublet including plano-concave and bi-convex elements(L2, L3), the cemented surface concave away from the incident light

A first cemented triplet including plano-concave, bi-convex elements,negative meniscus element (L4, L5, L6), the first cemented surfaceconcave away from the incident light

A first bi-convex element (L7)

6 Element Solution

With L5 removed to create a 6 element design:

A first bi-concave element (L1)

A first cemented doublet including plano-concave and bi-convex elements(L2, L3), the cemented surface concave away from the incident light

A first plano-convex element (L4)

A first negative meniscus element concave toward the incident light (L6)

A first bi-convex element (L7)

Preferably L2 is an anomalous dispersion glass, for example KzFSN4 IndexDispersion L1 n₁ > 1.58 v₁ < 40 L2 1.85 > n₂ > 1.5 v₂ < 50 L3 n₃ > 1.58v₃ < 40 L4 n₄ > 1.61 v₄ < 35 L5 1.85 > n₅ > 1.5 v₅ > 40 L6 n₆ > 1.61 v₆< 35 L7 1.85 > n₇ > 1.5 v₇ > 40 Effective focal length  110 mm Entrancepupil diameter 13.8 mm Input beam 1/e² diameter 13.8 mm Back workingdistance  150 mm Cutting Wavelength(s)  532 nm, 1.064 μm Spot size 1/e²diameter at .532 μm, 8 μm Spot size 1/e² diameter at 1.064 μm, 17 μmField angle 15° Field size   25 mm × 50 mm Telecentricity <3° Spotroundness ≧90%

Green/IR Scan Lens with Through-the-Lens Viewing Glass Data: IndexDispersion L1 1.65 33.8 L2 1.61 44.3 anomalous L3 1.81 25.4 L4 1.81 25.4L5 1.69 53.3 L6 1.81 25.4 L7 1.62 56.9

The preferred lens can be made by various optical manufacturing vendorsincluding Special Optics, Inc., according to the following productionspecification: Lens Prescription or Production Specification Surf TypeRadius Thickness Glass Diameter OBJ STANDARD Infinity Infinity 0 STOSTANDARD Infinity 0 13.8 0 2 COORDBRK — 19.05 — 3 COORDBRK — 18.288 — 4STANDARD −44.21 5 SF2 32 5 STANDARD 110.456 2.452387 38 6 STANDARDInfinity 5 KZFSN4 39 7 STANDARD 66.522 0.03 BK7 47 8 STANDARD 66.511 13SF6 47 9 STANDARD −66.511 11.81475 49 10  STANDARD Infinity 7 SFL6 6011  STANDARD 72.023 0.03 BK7 64 12  STANDARD 72.041 21.5 LAKN13 64 13 STANDARD −58.801 1.234915 66 14  STANDARD −60.136 7.50409 SF6 66 15 STANDARD −235.496 0.5 70 16  STANDARD 224.044 12.5 SK10 73 17  STANDARD−124.842 151.6795 74 IMA STANDARD Infinity 56.73353

The traditional 1-micron laser wavelength may not be able to generatethe small spot size, as well as the reduced heat affected zone (HAZ),necessary to allow very fine features to be trimmed, to maintain thestability of resistors, and to minimize the drift and the change intemperature coefficient of resistance (TCR). Traditionally, thewavelength of 1 micron has been used as it is the wavelength from acommonly used industrial laser based on Nd doped crystals. It also hasthe proper characteristics (power, repetition rate, beam quality, andmaterial absorption at the wavelength) to be the choice. Recently, asthe dimensions shrink and tolerances tighten, new materials emerge. Thetraditional 1-micron laser does not trim well on some of the newmaterials. Moreover, the trim quality and post trim stability can nolonger meet the new requirement due to the thermal and optical effectsof the 1 micron wavelength.

Shorter wavelengths have the advantages of being able to generatesmaller beam and smaller kerf, thus allows smaller features to betrimmed. Since most materials absorb more strongly at shorterwavelengths than at 1 micron, less thermal effects will be expected.Therefore, heat effected zone at shorter wavelengths tend to be less.This will in turn give rise to less TCR drift, which is caused by theheat affected zone around the laser trimming kerf.

There are two groups of film technologies used for resistors, namely,thick film and thin film. Thick film technology uses screen printtechnology. Both conductors and resistors are ink printed onto asubstrate. The typical thickness of the resistor film is 10-25 micronswith resistive values ranging from 10 Ohms/Square to 100,000Ohms/Square. Thin film technology uses a vapor deposition technique.Initially, the conductor and resistor films are deposited onto thesubstrate. Patterns are photo masked and chemically etched. The thinfilm thickness is less than a micron, usually between 10 to 100 nm. Thesubstrate can be glass, ceramic, or silicon. The thin film resistivevalues usually range from 100 Ohms/Square to 1,000 Ohms/Square dependingon the materials. The most common thin film materials are Nichrome,SiChrome and Tantulum Nitride.

In order to understand the benefits of shorter wavelengths, anapplication study was conducted using both a traditional IR (1 micron)laser and a green (0.532 microns) laser. The samples were thin film chipresistors (Ni-Chrome). The initial value of the chip resistor is 180Ohm+/−10%. The required final value after trim: 10 k Ohm with 0.1%tolerance and with a minimum TCR drift (<7%) after trim.

The laser trimming system includes a laser source, an optical beamdelivery system with high speed galvanometers and a machining head. Thelaser sources give both 1.064 microns and 0.532 microns. The trimmingmethod used was serpentine. Confirmed measurements include TRCmeasurement before and after trim off line. The actual power on targetsare 35 mw and 30 mw for 1.064 microns and 0.532 microns, respectively.The kerfs observed on samples were 20 microns and 13 microns,respectively.

The final results and TCR are shown in Table 1. Table 2 summarizes thetolerance results for the green laser. TABLE 1 Final results by 1.064-and 0.532 micron lasers on thin film chip resistors. Initial Final VCRTCR Trim Value Value Before Trim After Trim TCR Power Width Laser (Ohm)(Kohm) Multiplier (ppm) (ppm) Change (mW) (micron) 1.064 180 10 60 −24−10 14 35 20 Micron Laser 0.532 180 10 60 −25 −20  5 30 13 Micron Laser

TABLE 2 Tolerance results measured 2 minutes after trim for the greenlaser. Number Standard Low Limit Up Limit of Samples Average Max MinDeviation 9990.000 10010.000 224 9996.369 10004.400 9995.300 0.781

Compared to an IR laser, a cut by the green laser has narrower kerf andcleaner cut quality. No damage or micro-cracking were observed in theresistor.

The results show that thin film resistors trimmed by the green laserhave already met the tough tolerance requirement, i.e., better than0.1%. By reducing the wavelength from 1 micron to 0.5 microns, the spotsize can be reduced by half as well. From an optical point of view, a20-micron diameter beam at 1 micron wavelength is equivalent to 10micron in diameter beam at 0.5 micron. This spot size reduction becomesmore important as the size of resistors continue to shrink.

In addition, most of the thin and thick film materials have muchstronger absorptions at green as compared to their absorptions at 1micron. This results in better cutting quality, thus more stableresults.

In order to get green light from Nd doped solid state lasers, a harmonicgenerator was used to convert the fundamental wavelength at 1 micron tothe green. The material and the coatings for optics are very similar tothose of 1 micron in terms of cost and lifetime. Therefore, the greenlaser is still a reliable and cost effective laser source for themanufacturing process.

In conclusion, green lasers with smaller kerf (13 microns) and betterabsorption have demonstrated to be a very effective source to trim thehigh performance thin film chip resistors. Tolerance better than 0.1%has been achieved.

It is one aspect of the invention to improve the post trim stability byreducing or eliminating the heat-affected zone (HAZ) along the trimpath, as shown in FIG. 16 a. In order to achieve that, non-conventionaltypes of lasers—particularly fast rise/fall, pulse-shaped or anultra-fast laser, or combination thereof, may be used for trimming. Abeam shaping optics is also suggested to generate flat-top beam profileto reduce the HAZ along the trim path.

Referring now to FIG. 15, a fast rise/fall, pulse-shaped laser givesrise to more efficient process by better coupling the laser energy intothe material. Fast fall time prevents excess energy from the tail of thetypical q-switch pulse impinging the material. Therefore, less residualenergy left for the neighboring zone near the trim path—thus less HAZgenerated. A fast rise/fall, pulse-shaped laser may be used for trimmingto reduce the post trim drift caused by the HAZ along the trim path.

When the pulse width of the lasers is reduced, the thermally affectedarea, indicated by the thermal diffusion length is shortened. It hasbeen shown that the diffusion length is proportional to the square rootof the laser pulse width when the process is mainly thermal in nature.When the pulse duration is less that of the electron-photon interactiontime constant, which is roughly a few pico-seconds depending on thespecific material, the interaction becomes non-thermal in nature. TheHAZ in this case will be eliminated. Ultra-fast lasers may be used fortrimming to reduce or eliminate the post trim drift caused by the HAZalong the trim path, as shown in FIG. 16 b.

By spatially beam shaping the laser beam from the conventional Gaussian(i.e., FIG. 17 a) to a flat-top (i.e., FIG. 17 b), one would effectivelyreduce the spot size for trimming, thus reduce or eliminate the energyin the tail portion of the Gaussian beam, which is one of the maincauses for heating up the surrounding area along the trim path. Becauseof the less energy left outside the trim kerf, less HAZ will be producedfor the same total energy. A spatially shaped beam, preferably flat-top,may be used for trimming to reduce the post trim drift caused by the HAZalong the trim path.

A number of different laser types may be used in the method and systemof the present invention. For example, the laser types disclosed inFIGS. 1-8 and corresponding text of U.S. Pat. No. 6,979,798, as well asFIGS. 6 a-8 e and the corresponding text of published U.S. patentapplication 2004/0134896 (i.e., all types of fiber and solid statelasers and their MOPA configurations) are most preferred.

The following laser types may also be used as described with referenceto FIGS. 18-20:

1. Q-switched thin disk laser. Such a laser can generate short pulses inthe ns range (typical 1-30 ns) and has all of the advantages of a disklaser. An example of a resonator design based on a disk laser isillustrated in FIG. 18 and includes a mirror 180 (HR, R=5000 mm), Yb:YAG disk on heat sink 182, a mirror 184 (HR, R=−33000 mm), an AOM 186and element 188 (T=10%, plane). In this example, crystal thickness is150 μm, pumped diameter is 2.2 mm and cavity length is 840 mm.

2. Regenerative thin disk amplifier. A typical system configuration isshown in FIG. 20 and comprises:

a) a seed-laser including a thin disk pump module, a Lyot-Filter 2002,an etalon 2004, an output coupler 2006 and an optimal isolator;

b) a pulse slicer including a λ/2 plate 2008, a Pockels cell and a TFP2010;

c) a pair of mirrors 2012; and

d) an input-output separation module or unit including a mirror 2014, aTFP 2016, a detector which detects an output beam, a λ/2 plate 2018 anda Faraday isolator; and

e) a regenerative amplifier including a TFP 2024, mirrors 2022, a thindisk pump module, an end mirror 2020, a λ/4 plate 2026, a Pockels celland an end mirror 2028.

3. Disk-based ultrafast laser. An example is Yb:YAG passivelymode-locking oscillator which will give 16.2 watts with a 730 fs pulsewidth at 34.6 MHZ and described in OPTICS LETTERS, 25, 859 (2000).Another example is a thin disk regenerative amplifier such asillustrated in FIG. 19. A seed laser may be used as the masteroscillator which could be a disk laser itself as described immediatelyabove or other type of ultrafast laser source. This arrangement giveshigh pulse energy at ultrafast pulse widths. An example of a thin diskregenerative amplifier is shown in FIG. 19 and comprises:

a) the master oscillator;

b) mirrors 197;

c) a separation module or unit including a polarizer 196, a detector fordetecting an output beam from the polarizer 196, a Faraday rotator and aλ/2 plate 195; and

d) a resonator unit or module including a thin disk mounted on a heatsink 190, mirrors 191, a polarizer 192, a λ/4 plate 193, a Pockels celland a mirror 194.

When an ultra-short pulse propagates through a transparent medium, suchas a window or even air, it will get stretched in time due to thedispersion of the material. When focusing ultra-broadband femtosecondpulses, the compensation of the dispersion of the lenses has to beprovided in order to get the best solution to focus ultra-short pulsesto a small and undistorted spot size. The ability to control dispersioneffects is significantly important for all applications requiringultra-short (femto-second) laser pulses. Therefore, optical elements inthe system beam delivery system have to be carefully designed and chosenin order to have minimal phase distortion and therefore optimumdispersion performance. These dispersion compensated or controlledoptical elements, e.g., turning mirrors, beam splitters, lenses, prisms,etc., are commercially available. One of the suppliers is FemtolasersProduktions GmbH, Vienna, Austria.

While embodiments of the invention have been illustrated and described,it is not intended that these embodiments illustrate and describe allpossible forms of the invention. Rather, the words used in thespecification are words of description rather than limitation, and it isunderstood that various changes may be made without departing from thespirit and scope of the invention.

1. A method of high-speed, laser-based, precise laser trimming at leastone electrical element having at least one measurable property, the atleast one element being supported on a substrate, the method comprising:generating a pulsed laser output with a laser, the output having one ormore laser pulses at a repetition rate, each laser pulse has a pulseenergy, a laser wavelength within a range of laser wavelengths, and apulse duration; and selectively irradiating the at least one electricalelement with the one or more laser pulses focused into at least one spothaving a non-uniform intensity profile along a direction and a spotdiameter less than about 15 microns so as to cause the one or more laserpulses having the wavelength, energy, pulse duration and the spotdiameter to selectively remove material from the at least one elementand laser trim the at least one element along a trim path while avoidingsubstantial microcracking within the at least one element, thewavelength being short enough to produce desired short-wavelengthbenefits of small spot size, tight tolerance, high absorption andreduced or eliminated heat-affected zone (HAZ) along the trim path, butnot so short so as to cause microcracking.
 2. The method as claimed inclaim 1, wherein focused pulsed laser output power corresponds to about10-50 mw with a spot diameter of less than about 15 μm, the power beingscalable with reduced spot sizes less than about 15 μm such thatcorresponding power density is high enough to trim the element butsufficiently low to avoid microcracking.
 3. The method as claimed inclaim 1, wherein any microcracking obtained as a result of removingmaterial from at least a first portion of the at least one element isinsubstantial compared to microcracking obtained upon removing materialfrom the at least one element, or from a portion of a second element,using at least one other wavelength outside the range of laserwavelengths.
 4. The method as claimed in claim 1, wherein the removal ofmaterial from the at least one element creates a trim cut with a kerfwidth corresponding to the spot.
 5. The method as claimed in claim 1,wherein the step of selectively irradiating with the one or more laserpulses is carried out to at least limit formation of the heat-affectedzone.
 6. The method as claimed in claim 1, wherein the repetition rateis at least 10 Kilohertz.
 7. The method as claimed in claim 1, whereinat least one laser pulse of the laser output has a picosecond orfemtosecond pulse width.
 8. The method as claimed in claim 1, wherein anarray of thin film electrical elements are trimmed, and wherein themethod further comprises: selectively micromachining one element in thearray to vary a value of a measurable property; and suspending the stepof selectively micromachining, and while the step of selectivelymicromachining is suspended, selectively micromachining at least oneother element in the array to vary a value of a measurable property, themethod further comprising resuming the suspended step of selectivelymicromachining to vary a measurable property of the one element untilits value is within a desired range.
 9. The method as claimed in claim8, wherein the at least one element includes a resistor and wherein theat least one measurable property is at least one of resistance andtemperature.
 10. The method as claimed in claim 8 further comprisingsuspending micromachining when a measurement of the at least onemeasurable property is within a predetermined range.
 11. A system forhigh-speed, laser-based, precise laser trimming at least one electricalelement having at least one measurable property, the at least oneelement being supported on a substrate, the system comprising: a lasersubsystem to generate a pulsed laser output having one or more laserpulses at a repetition rate, each laser pulse having a pulse energy, avisible laser wavelength, and a pulse duration; a beam deliverysubsystem that accepts the pulsed laser output and includes: at leastone beam deflector to position the one or more laser pulses relative tothe at least one element to be trimmed; and an optical subsystem tofocus the one or more laser pulses having the visible laser wavelengthinto at least one spot within a field of the optical subsystem; the atleast one spot having a non-uniform intensity profile along a directionand a spot diameter less than about 15 microns; and a controller coupledto the beam delivery and laser subsystems to control the beam deliveryand laser subsystems to selectively irradiate the at least one elementsuch that the one or more laser output pulses having the visible laserwavelength, the pulse duration, the pulse energy and the spot diameterselectively remove material from the at least one element and laser trimthe at least one element along a trim path while avoiding substantialmicrocracking within the at least one element, the laser wavelengthbeing short enough to produce desired short-wavelength benefits of smallspot size, tight tolerance, high absorption and reduced or eliminatedheat-affected zone (HAZ) along the trim path, but not so short so as tocause microcracking.
 12. The system as claimed in claim 11, whereinfocused pulsed laser output power corresponds to about 10-50 mw with aspot diameter of less than about 15 μm, the power being scalable withreduced spot sizes less than about 15 μm such that corresponding powerdensity is high enough to trim the element but sufficiently low to avoidmicrocracking.
 13. The system as claimed in claim 11, wherein the lasersubsystem includes a q-switched, frequency-doubled, solid state laserhaving a fundamental wavelength in the range of about 1.047 microns to1.32 microns, and the visible output wavelength is a frequency-doubledwavelength in a visible wavelength range of about 0.5 microns to about0.7 microns.
 14. The system as claimed in claim 11, wherein the spotdiameter is as small as about 6 microns to about 10 microns.
 15. Thesystem as claimed in claim 11, wherein the optical subsystem includes alens that is achromatized at two or more wavelengths, at least one ofthe wavelengths being a visible wavelength.
 16. The system as claimed inclaim 15, further comprising: an illuminator to illuminate a substrateregion with radiant energy at one or more illumination wavelengths; anda detection device having sensitivity to the radiant energy at one ofthe illumination wavelengths wherein one of the two or more wavelengthsis a visible laser wavelength and the other is the illuminationwavelength.
 17. The system as claimed in claim 11, wherein the opticalsubsystem is a telecentric optical subsystem.
 18. The system as claimedin claim 17, wherein the telecentric optical subsystem includes atelecentric lens.
 19. The system as claimed in claim 11, wherein therepetition rate is at least 10 Kilohertz.
 20. The system as claimed inclaim 11, wherein at least one laser pulse of the laser output has apicosecond or femtosecond pulse width.
 21. The system as claimed inclaim 11, wherein the focused spot diameter is about 6 microns to about10 microns at any location within the field of the optical subsystem.22. The system as claimed in claim 11, further comprising a calibrationalgorithm to adjust coordinates of material to be irradiated within theat least one element and to thereby precisely control a dimension of aregion of material removal.
 23. The system as claimed in claim 11,further comprising a machine vision subsystem including a visionalgorithm to locate or measure at least one geometric feature of the atleast one element.
 24. The system as claimed in claim 23, wherein thevision algorithm includes edge detection and the at least one geometricfeature are edges of the at least one element, the edges being used todetermine width of the at least one element and to define a dimensionfor material removal.
 25. The system as claimed in claim 11, wherein amaterial of the substrate is a semiconductor.
 26. The system as claimedin claim 11, wherein a material of the substrate is a ceramic.
 27. Thesystem as claimed in claim 18, wherein a material of the substrate isglass.
 28. The system as claimed in claim 11, wherein the at least oneelement includes a thin-film element.
 29. The system as claimed in claim28, wherein the thin-film element comprises at least one of NiChrome,SiChrome, and Tantulum Nitride.
 30. The system as claimed in claim 11,wherein the at least one element is a thick-film element.
 31. The systemas claimed in claim 11, wherein the at least one element is trimmed towithin a tolerance of 0.1% or better.
 32. The system as claimed in claim11, wherein an array of thin-film electrical elements is to be trimmedwith the system and wherein the controller includes: means toselectively micromachine an array element to vary a value of ameasurable property; means to suspend the selective micromachining whilethe selective micromachining is suspended; means to selectivelymicromachine at least one other array element to vary a value of ameasurable property; and means to resume the selective micromachining tovary a measurable property of the array element until its value iswithin a desired range.
 33. The system as claimed in claim 11, furthercomprising a user interface, and a software program coupled to theinterface and the controller, the software program adapted to acceptpre-trim target values for the at least one element and to limit anelectrical output being applied to the at least one element based on thevalues.
 34. The method as claimed in claim 1, wherein the laser is afast rise/fall, pulse-shaped q-switched laser.
 35. The method as claimedin claim 1, wherein the laser is a picosecond or femtosecond laser. 36.The method as claimed in claim 1, further comprising the step ofspatially shaping the one or more laser pulses to form one or morespatially-shaped laser pulses which are focused into the at least onespot.
 37. The system as claimed in claim 11, wherein the laser is a fastrise/fall, pulse-shaped q-switched laser.
 38. The system as claimed inclaim 11, wherein the laser is a picosecond or femtosecond laser. 39.The system as claimed in claim 11, wherein the optical subsystemspatially shapes the one or more laser pulses to form one or morespatially shaped laser pulses which are focused into the at least onespot.
 40. The method as claimed in claim 35, wherein the opticalsubsystem includes at least one dispersion-compensated optical element.41. The system as claimed in claim 38, wherein the optical subsystemincludes at least one dispersion-compensated optical element.
 42. Themethod as claimed in claim 1, wherein TCR drift after trimming is lessthan about 5 ppm.
 43. The system as claimed in claim 11, wherein TCRdrift after trimming is less than about 5 ppm.
 44. A method ofhigh-speed, laser-based, precise laser trimming at least one electricalelement having at least one measurable property, the at least oneelement being supported on a substrate, the method comprising:generating a pulsed laser output with a laser, the output having one ormore laser pulses at a repetition rate, each laser pulse has a pulseenergy, a laser wavelength within a range of laser wavelengths, and apulse duration; and selectively irradiating the at least one electricalelement with the one or more laser pulses focused into at least one spothaving a non-uniform intensity profile along a direction and a spotdiameter less than about 15 microns so as to cause the one or more laserpulses having the wavelength, energy, pulse duration and the spotdiameter to selectively remove material from the at least one elementand laser trim the at least one element along a trim path while avoidingsubstantial microcracking within the at least one element, the temporalcharacteristics of the one or more laser pulses producing desiredbenefits of small kerf size, tight tolerance, and reduced or eliminatedheat-affected zone (HAZ) along the trim path.
 45. The method as claimedin claim 44, wherein a temporal characteristic of the one or more laserpulses includes a substantially square pulse shape, fast rise and falltimes, and a pulse duration of less than about 30 nsec.
 46. The methodas claimed in claim 44, wherein the pulse duration is in either thefemtosecond or picosecond range.
 47. The method as claimed in claim 44,wherein the laser wavelength is a visible or near IR wavelength.
 48. Asystem of high-speed, laser-based, precise laser trimming at least oneelectrical element having at least one measurable property, the at leastone element being supported on a substrate, the system comprising: meansincluding a laser for generating a pulsed laser output, the outputhaving one or more laser pulses at a repetition rate, each laser pulsehas a pulse energy, a laser wavelength within a range of laserwavelengths, and a pulse duration; and means for selectively irradiatingthe at least one electrical element with the one or more laser pulsesfocused into at least one spot having a non-uniform intensity profilealong a direction and a spot diameter less than about 15 microns so asto cause the one or more laser pulses having the wavelength, energy,pulse duration and the spot diameter to selectively remove material fromthe at least one element and laser trim the at least one element along atrim path while avoiding substantial microcracking within the at leastone element, the temporal characteristics of the one or more laserpulses producing desired benefits of small kerf size, tight tolerance,and reduced or eliminated heat-affected zone (HAZ) along the trim path.49. The system as claimed in claim 48, wherein the laser includes afiber laser.
 50. The system as claimed in claim 49, wherein the meansfor generating the pulsed laser output includes amaster-oscillator/power amplifier.
 51. The system as claimed in claim48, wherein the laser is a femtosecond or picosecond laser.
 52. Thesystem as claimed in claim 48, wherein the wavelength is a visible ornear IR wavelength.
 53. A multiple element achromatic scan lensconfigured to provide: a scan field encompassing a scan area of about 25mm×50 mm; a green wavelength laser spot size less than 20 microns toabout 8 microns or less, wherein a scan field diameter measures up toabout 7000 spots; and a viewing channel with a bandwidth of at least 40nm to 100 nm or more, wherein each element is composed of a glass typehaving an index of refraction, n_(n), and a dispersion, v_(n); the scanlens comprising in succession from a side of incident light: a firstbi-concave element (L1); a first cemented doublet includingplano-concave and bi-convex elements (L2, L3), a cemented surface of thefirst cemented doublet being concave away from the incident light,wherein n₂<n₃, v₂>v₃, and v₂ represents an anomalous dispersion; asecond cemented doublet including plano-concave and bi-convex elements(L4, L5), a cemented surface of the second cemented doublet beingconcave away from the incident light; a first negative meniscus element(L6) being concave toward the incident light; a first bi-convex element(L7); and wherein values of n_(n) and v_(n) for each glass element arecharacterized by the relationships: Index Dispersion L1 n₁ > 1.58 v₁ <40 L2 1.85 > n₂ > 1.5 v₂ < 50 L3 n₃ > 1.58 v₃ < 40 L4 n₄ > 1.61 v₄ < 35L5 1.85 > n₅ > 1.5 v₅ > 40 L6 n₆ > 1.61 v₆ < 35 L7 1.85 > n₇ > 1.5 v₇ >40


54. The multiple element achromatic scan lens of claim 53 whereinairspace between the second cemented doublet (L4/L5) and the firstnegative meniscus element (L6) is set to zero thickness and elements L4,L5, and L6 form a triplet (L4/L5/L6).
 55. The multiple elementachromatic scan lens of claim 53 wherein the second cemented doublet(L4/L5) is replaced with a single element (L4).
 56. The multiple elementachromatic scan lens of claim 53 wherein values of n_(n) and v_(n) foreach glass element are: Index Dispersion L1 1.65 33.8 L2 1.61 44.3anomalous L3 1.81 25.4 L4 1.81 25.4 L5 1.69 53.3 L6 1.81 25.4 L7 1.6256.9